Datenblatt-Suchmaschine für elektronische Bauteile |
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BD243 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD243 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BD243/A/B/C CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD243 45 BD243A 60 BD243B 80 VCEO(SUS) Collector-emitter sustaining voltage BD243C IC=30mA; IB=0 100 V VCEsat Collector-emitter saturation voltage IC=6A;IB=1 A 1.5 V VBE Base-emitter on voltage IC=6A ; VCE=4V 2.0 V BD243/A VCE=30V; IB=0 ICEO Collector cut-off current BD243B/C VCE=60V; IB=0 0.7 mA BD243 VCE=45V; VBE=0 BD243A VCE=60V; VBE=0 BD243B VCE=80V; VBE=0 ICES Collector cut-off current BD243C VCE=100V; VBE=0 0.4 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE-1 DC current gain IC=0.3A ; VCE=4V 30 hFE-2 DC current gain IC=3A ; VCE=4V 15 |
Ähnliche Teilenummer - BD243 |
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Ähnliche Beschreibung - BD243 |
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