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BD301 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer BD301
Bauteilbeschribung  isc Silicon NPN Power Transistor
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD301 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD301
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 200mA; IB= 0
45
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
B
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
B
1.5
V
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
B
1.0
mA
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0; TC= 150℃
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
5.0
mA
hFE
DC Current Gain
IC= 3A; VCE= 2V
30
fT
Current-Gain—Bandwidth Product
IC= 0.3A; VCE= 3V
3
MHz
isc Website：www.iscsemi.cn
2


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