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BDX65 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDX65 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX65 DESCRIPTION ・With TO-3 package ・DARLINGTON ・Complement to type BDX64 APPLICATIONS ・Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A ICM Collector current(peak) 16 A IB Base current 0.2 A PT Total power dissipation TC=25℃ 117 W Tj Junction temperature -55~200 ℃ Tstg Storage temperature -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 1.5 ℃/W Fig.1 simplified outline (TO-3) and symbol |
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Ähnliche Beschreibung - BDX65 |
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