BDX88C datasheet(1/3 Pages) ISC

Teilenummer	BDX88C

Bauteilbeschribung	Silicon PNP Power Transistors

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

BDX88C

DESCRIPTION

・With TO-3 package

・Complement to type BDX87C

・DARLINGTON

APPLICATIONS

・Designed for use in power linear and

switching application.

PINNING (See Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-100

V

VCEO

Collector-emitter voltage

Open base

-100

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-12

A

ICM

Collector current(peak)

-18

A

IB

Base current

-0.2

A

PT

Total power dissipation

TC=25℃

120

W

Tj

Max. operating Junction temperature

200

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance from junction to case

1.45

℃/W

Fig.1 simplified outline (TO-3) and symbol

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