Datenblatt-Suchmaschine für elektronische Bauteile |
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BU522 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU522 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon Darlington NPN Power Transistor BU522 DESCRIPTION ·High Voltage ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V @ IC= 4A APPLICATIONS ·Designed for use in ignition circuit. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER(SUS) Collector-Emitter Voltage 350 V VCER Collector-Emitter Voltage 375 V VCBO Collector-Base Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 7 A IB B Base Current 2 A PC Collector Power Dissipation @TC=25℃ 75 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W isc Website:www.iscsemi.cn |
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Ähnliche Beschreibung - BU522 |
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