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SFT1440 Datenblatt(PDF) 2 Page - Sanyo Semicon Device

Teilenummer SFT1440
Bauteilbeschribung  General-Purpose Switching Device Applications
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Hersteller  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

SFT1440 Datenblatt(HTML) 2 Page - Sanyo Semicon Device

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SFT1440
No. A1816-2/4
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=10mA, VGS=0V
600
V
Zero-Gate Voltage Drain Current
IDSS
VDS=480V, VGS=0V
100
μA
Gate-to-Source Leakage Current
IGSS
VGS=±24V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
3.0
5.0
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=0.8A
1.0
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=0.8A, VGS=10V
6.2
8.1
Ω
Input Capacitance
Ciss
VDS=30V, f=1MHz
130
pF
Output Capacitance
Coss
VDS=30V, f=1MHz
25
pF
Reverse Transfer Capacitance
Crss
VDS=30V, f=1MHz
4.0
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
9.1
ns
Rise Time
tr
See specified Test Circuit.
15
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
18
ns
Fall Time
tf
See specified Test Circuit.
19
ns
Total Gate Charge
Qg
VDS=300V, VGS=10V, ID=1.5A
6.3
nC
Gate-to-Source Charge
Qgs
VDS=300V, VGS=10V, ID=1.5A
1.4
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=300V, VGS=10V, ID=1.5A
3.6
nC
Diode Forward Voltage
VSD
IS=1.5A, VGS=0V
0.85
1.2
V
Switching Time Test Circuit
ID -- VDS
ID -- VGS
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
IT15876
13
4
25
15
78
6
9
11 12 13 14
10
0
VDS=10V
25°C
IT15875
04
2
6
8
101214
18
16
20
0
2.0
0.6
0.8
0.2
1.8
1.6
1.4
1.2
1.0
0.4
VGS=5V
8V
6V
7V
75°C
15V
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=0.8A
RL=250Ω
VDD=200V
VOUT
VIN
10V
0V
VIN
SFT1440


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