BUH315 datasheet(2/3 Pages) ISC | Silicon NPN Power Transistors

Teilenummer	BUH315

Bauteilbeschribung	Silicon NPN Power Transistors

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

2

Silicon NPN Power Transistors

BUH315

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=100mA; IB=0

700

V

V(BR)EBO

Emitter-base breakdown voltage

IE=10mA; IC=0

10

V

VCEsat

Collector-emitter saturation voltage

IC=3A ;IB=0.75A

1.5

V

VBEsat

Base-emitter saturation voltage

IC=3A ;IB=0.75A

1.3

V

ICES

Collector cut-off current

VCE=1500V; VBE=0

0.2

mA

IEBO

Emitter cut-off current

VEB=5V; IC=0

0.1

mA

hFE

DC current gain

IC=3A ; VCE=5V

Tj=100℃

6

3.5

12

Switching times resistive load

ts

Storage time

2.4

μs

tf

Fall time

IC=3A;IB1=0.75A;IB2=1.5A

VCC=400V

0.2

μs

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance from junction to case

2.8

℃/W

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