BUH315 datasheet(1/3 Pages) ISC | Silicon NPN Power Transistors

Teilenummer	BUH315

Bauteilbeschribung	Silicon NPN Power Transistors

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BUH315

DESCRIPTION

・With TO-3PML package

・High voltage

・High speed switching

APPLICATIONS

・Horizontal deflection for color TV

・Switch mode power supplies.

PINNING

DESCRIPTION

1

Base

2

Collector

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

1500

V

VCEO

Collector-emitter voltage

Open base

700

V

VEBO

Emitter-base voltage

Open collector

10

V

IC

Collector current (DC)

6

A

ICM

Collector current-peak

tp<5ms

12

A

IB

Base current (DC)

3

A

IBM

Base current-peak

tp<5ms

5

A

Ptot

Total power dissipation

TC=25℃

44

W

Tj

Operating junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

Fig.1 simplified outline (TO-3PML) and symbol

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STMicroelectronics	BUH315	80Kb / 7P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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Savantic, Inc.	BUH315	148Kb / 3P	Silicon NPN Power Transistors
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BUH315 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

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