Datenblatt-Suchmaschine für elektronische Bauteile |
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BUS131 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUS131 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS131/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BUS131 450 VCEO(SUS) Collector-Emitter Sustaining Voltage BUS131A IC= 0.1A ; IB= 0; L= 10mH 500 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.2A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.4A B 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.4A B 1.5 V ICEV Collector Cutoff Current VCE=VCESMmax;VBE=-1.5V VCE=VCESMmax;VBE=-1.5V;TJ=100℃ 0.25 1.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1 mA hFE DC Current Gain IC= 5A ; VCE= 5V 5 COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1kHz 200 pF Switching Times , Resistive Load ton Turn-On Time 0.35 μs tstg Storage Time 1.2 μs tf Fall Time IC= 3A ;IB1= 0.4A;IB2= -0.8A 0.07 μs isc Website:www.iscsemi.cn |
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