Datenblatt-Suchmaschine für elektronische Bauteile |
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BUW11 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUW11 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW11 BUW11A DESCRIPTION ・With TO-3PN package ・High voltage ;high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT BUW11 850 VCBO Collector-base voltage BUW11A Open emitter 1000 V BUW11 400 VCEO Collector-emitter voltage BUW11A Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2 A IBM Base current-peak 4 A PT Total power dissipation TC=25℃ 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-mb Thermal resistance from junction to mounting base 1.25 K/W Fig.1 simplified outline (TO-3PN) and symbol |
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Ähnliche Beschreibung - BUW11 |
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