Datenblatt-Suchmaschine für elektronische Bauteile |
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HFA200FA120P Datenblatt(PDF) 1 Page - Vishay Siliconix |
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HFA200FA120P Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 94607 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 HEXFRED® Ultrafast Soft Recovery Diode, 200 A HFA200FA120P Vishay Semiconductors FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION/APPLICATIONS The dual diode series configuration (HFA200FA120P) is used for output rectification or freewheeling/clamping operation and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters. PRODUCT SUMMARY VR 1200 V VF (typical) 2.7 V trr (typical) 150 ns IF(DC) at TC 100 A at 69 °C SOT-227 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Cathode to anode voltage VR 1200 V Continuous forward current IF TC = 69 °C 100 A Single pulse forward current IFSM TJ = 25 °C 900 Maximum repetitive forward current IFRM Rated VR, square wave, 20 kHz, TC = 60 °C 150 Maximum power dissipation PD TC = 25 °C 416 W TC = 100 °C 166 RMS isolation voltage VISOL Any terminal to case, t = 1 minute 2500 V Operating junction and storage temperature range TJ, TStg - 55 to + 150 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown voltage VBR IR = 100 μA 1200 - - V Forward voltage VFM IF = 100 A - 2.68 3.6 IF = 200 A - 3.37 4.7 IF = 100 A, TJ = 150 °C - 2.7 2.9 Reverse leakage current IRM VR = VR rated - 10 75 μA TJ = 125 °C, VR = VR rated - 2 - mA |
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