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BUW40 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer BUW40
Bauteilbeschribung  isc Silicon NPN Power Transistors
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUW40 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BUW40/A/B
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BUW40
300
BUW40A
350
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BUW40B
IC= 200mA ; IB= 0
400
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
6
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
B
IC= 1A; IB= 0.2A,T
B
C= 150℃
1.0
2.0
V
VBE(on)
Base-Emitter On Voltage
IC= 1A ; VCE= 3V
1.5
V
BUW40
VCE= 450V;VBE= -1.5V
VCE= 450V;VBE= -1.5V,TC= 150℃
0.1
1.0
BUW40A
VCE= 550V;VBE= -1.5V
VCE= 550V;VBE= -1.5V,TC= 150℃
0.1
1.0
ICEV
Collector
Cutoff Current
BUW40B
VCE= 650V;VBE= -1.5V
VCE= 650V;VBE= -1.5V,TC= 150℃
0.1
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
1.0
mA
hFE
DC Current Gain
IC= 1A ; VCE= 3V
10
50
fT
Current-Gain—Bandwidth Product
IC= 0.5A ;VCE= 10V
10
MHz
isc Website:www.iscsemi.cn
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