BAS125 datasheet(3/5 Pages) SIEMENS

Teilenummer	BAS125

Bauteilbeschribung	Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications)

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Hersteller	SIEMENS [Siemens Semiconductor Group]

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BAS 125 …

Electrical Characteristics per Diode

at TA = 25 ˚C, unless otherwise specified.

Unit

Values

Parameter

Symbol

min.

typ.

max.

µA

Reverse current

VR = 20 V

VR = 25 V

IR

–

1

10

mV

Forward voltage

IF = 1 mA

IF = 10 mA

IF = 35 mA

VF

–

385

530

800

410

–

900

Ω

Differential forward resistance

IF = 5 mA, f = 10 kHz

RF

–15

–

pF

Diode capacitance

VR = 0, f = 1 MHz

CT

–

1.1

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BAS125 Datenblatt(PDF) 3 Page - Siemens Semiconductor Group

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