Datenblatt-Suchmaschine für elektronische Bauteile |
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BAS16S Datenblatt(PDF) 2 Page - Siemens Semiconductor Group |
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BAS16S Datenblatt(HTML) 2 Page - Siemens Semiconductor Group |
2 / 4 page BAS 16S Semiconductor Group Apr-24-1998 2 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Breakdown voltage I(BR) = 100 µA V(BR) 75 - - V Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA VF - - - - - - - - 715 855 1000 1250 mV Reverse current VR = 70 V IR - - 2.5 µA Reverse current VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C IR - - - - 30 50 nA AC characteristics Diode capacitance VR = 0 V, f = 1 MHz CD - - 2 pF Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω, measured at IR = 1mA trr - - 6 ns Test circuit for reverse recovery time EHN00016 Ι F D.U.T. Oscillograph Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50Ω Oscillograph: R = 50 Ω, t r = 0.35ns, C ≤ 1pF Semiconductor Group 2 1998-11-01 |
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Ähnliche Beschreibung - BAS16S |
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