Datenblatt-Suchmaschine für elektronische Bauteile |
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TIP32D Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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TIP32D Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP32D DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= -120V(Min) ·Complement to Type TIP31D APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse -5 A IB B Base Current -1 A PC Collector Power Dissipation TC=25℃ 40 W Tj Junction Temperature 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.125 ℃/W isc Website:www.iscsemi.cn |
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Ähnliche Beschreibung - TIP32D |
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