BAT14-099 datasheet(2/4 Pages) SIEMENS

Teilenummer	BAT14-099

Bauteilbeschribung	Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)

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Hersteller	SIEMENS [Siemens Semiconductor Group]

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BAT 14-099

Electrical Characteristics per Diode

at TA = 25 ˚C, unless otherwise specified.

Forward voltage matching

IF = 10 mA

∆VF

mV

––10

Forward voltage

IF = 1 mA

IF = 10 mA

VF

–

0.43

0.55

–

Diode capacitance

VR = 0, f= 1 MHz

CT

pF

–

0.35

Parameter

Symbol

min.

typ.

Unit

Values

max.

Forward resistance

IF = 10 mA / 50 mA

RF

Ω

–

5.5

–

Breakdown voltage

IR = 5

µA

VBR

V

4––

Ähnliche Beschreibung - BAT14-099

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Siemens Semiconductor G...	BAT14-098	88Kb / 4P	Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)
	BAT15-099	143Kb / 4P	Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type)
	BAT15-098	88Kb / 4P	Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type)
	BAT15-04	67Kb / 3P	Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
	BAT15-03W	65Kb / 4P	Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
	BAT14-03W	36Kb / 4P	Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance)
Infineon Technologies A...	BAT15-02EL	1Mb / 16P	Low barrier type for DBS mixer applications
Siemens Semiconductor G...	BAT63	114Kb / 3P	Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)
Advanced Semiconductor	D1504-8M	19Kb / 1P	SILICON SCHOTTKY BARRIER MIXER DIODE
Tyco Electronics	MA4E1339SERIES	118Kb / 4P	Silicon Medium Barrier Schottky Diode

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Ähnliche Teilenummer - BAT14-099

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