Datenblatt-Suchmaschine für elektronische Bauteile |
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TIP52 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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TIP52 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP52 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 300 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 10V 1.5 V ICES Collector Cutoff Current VCE= 400V; VBE= 0 1.0 mA ICEO Collector Cutoff Current VCE= 200V; IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.3A; VCE= 10V 30 150 hFE-2 DC Current Gain IC= 3A; VCE= 10V 10 fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V 2.5 MHz isc Website:www.iscsemi.cn |
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