SI1029X_10 datasheet(7/10 Pages) VISHAY

Teilenummer	SI1029X

Bauteilbeschribung	Complementary N- and P-Channel 60 V (D-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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Document Number: 71435

S10-2432-Rev. C, 25-Oct-10

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Vishay Siliconix

Si1029X

N- OR P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?71435.

Normalized Thermal Transient Impedance, Junction-to-Ambient

10 -3

10 -2

0

6

0

1

10 -1

10-4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 500 °C/W

3. TJM - TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

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Ähnliche Beschreibung - SI1029X_10

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Vishay Siliconix	SI1029X-T1	113Kb / 8P	Complementary N- and P-Channel 60-V (D-S) MOSFET Rev. B, 24-Mar-08
Vishay Siliconix	SI1029X	131Kb / 8P	Complementary N- and P-Channel 60-V (D-S) MOSFET Rev. B, 24-Mar-08
Vishay Telefunken	SI1029X	161Kb / 10P	Complementary N- and P-Channel 60 V (D-S) MOSFET
Vishay Siliconix	SI1029X	130Kb / 8P	Complementary N- and P-Channel 60-V (D-S) MOSFET Rev. B, 24-Mar-08
	SI1029X	164Kb / 10P	Complementary N- and P-Channel 60 V (D-S) MOSFET 01-Jan-2022
	SI4559ADY	275Kb / 15P	N- and P-Channel 60-V (D-S) MOSFET Rev. B, 09-Mar-09
VBsemi Electronics Co.,...	IRF7343TRPBF	1Mb / 14P	N- and P-Channel 60-V (D-S) MOSFET
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Ähnliche Beschreibung - SI1029X_10

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