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SI1035X Datenblatt(PDF) 2 Page - Vishay Siliconix

Teilenummer SI1035X
Bauteilbeschribung  Complementary N- and P-Channel 20 V (D-S) MOSFET
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Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
Vishay Siliconix
Si1035X
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
N-Ch
0.40
V
VDS = VGS, ID = - 250 µA
P-Ch
- 0.40
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 2.8 V
N-Ch
± 0.5
± 1.0
µA
P-Ch
± 0.5
± 1.0
VDS = 0 V, VGS = ± 4.5 V
N-Ch
± 1.5
± 3.0
P-Ch
± 1.0
± 3.0
Zero Gate Voltage Drain Current
IDSS
VDS = 16 V, VGS = 0 V
N-Ch
1
500
nA
VDS = - 16 V, VGS = 0 V
P-Ch
- 1
- 500
VDS = 16 V, VGS = 0 V, TJ = 85 °C
N-Ch
10
µA
VDS = - 16 V, VGS = 0 V, TJ = 85 °C
P-Ch
- 10
On-State Drain Currenta
ID(on)
VDS = 5 V, VGS = 4.5 V
N-Ch
250
mA
VDS = - 5 V, VGS = - 4.5 V
P-Ch
- 200
Drain-Source On-State
Resistancea
RDS(on)
VGS = 4.5 V, ID = 200 mA
N-Ch
5
VGS = - 4.5 V, ID = - 150 mA
P-Ch
8
VGS = 2.5 V, ID = 175 mA
N-Ch
7
VGS = - 2.5 V, ID = 125 mA
P-Ch
12
VGS = 1.8 V, ID = 150 mA
N-Ch
9
VGS = - 1.8 V, ID = - 100 mA
P-Ch
15
VDS = 1.5 V, ID = 40 mA
N-Ch
10
VDS = - 1.5 V, ID = - 30 mA
P-Ch
20
Forward Transconductancea
gfs
VDS = 10 V, ID = 200 mA
N-Ch
0.5
S
VDS = - 10 V, ID = - 150 mA
P-Ch
0.4
Diode Forward Voltagea
VSD
IS = 150 mA, VGS = 0 V
N-Ch
1.2
V
IS = - 150 mA, VGS = 0 V
P-Ch
- 1.2
Dynamicb
Total Gate Charge
Qg
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 150 mA
P-Channel
VDS = - 10 V, VGS = - 4.5 V, ID = - 150 mA
N-Ch
750
pC
P-Ch
1500
Gate-Source Charge
Qgs
N-Ch
75
P-Ch
150
Gate-Drain Charge
Qgd
N-Ch
225
P-Ch
450
Turn-On Time
tON
N-Channel
VDD = 10 V, RL = 47 
ID  250 mA, VGEN = 4.5 V, Rg = 10 
N-Ch
75
ns
P-Ch
80
Turn-Off Time
tOFF
P-Channel
VDD = - 10 V, RL = 65 
ID  - 150 mA, VGEN = - 4.5 V, Rg = 10 
N-Ch
75
P-Ch
90


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