Datenblatt-Suchmaschine für elektronische Bauteile |
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SI4564DY-T1-GE3 Datenblatt(PDF) 5 Page - Vishay Siliconix |
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SI4564DY-T1-GE3 Datenblatt(HTML) 5 Page - Vishay Siliconix |
5 / 12 page Document Number: 65922 S10-0455-Rev. B, 22-Feb-10 www.vishay.com 5 Vishay Siliconix Si4564DY N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - 0.6 - 0.4 - 0.2 0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA ID =5mA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.02 0.04 0.06 0.08 0.10 012 3 45 67 89 10 TJ =25 °C ID =8A TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0 12 24 36 48 60 0 1 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 0.01 100 1 100 0.01 0.1 1ms 10 s 10 ms 0.1 1 10 10 TA = 25 °C Single Pulse DC BVDSS Limited 1s 100 ms Limited by RDS(on)* VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified |
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Ähnliche Beschreibung - SI4564DY-T1-GE3 |
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