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SI4620DY-T1-E3 Datenblatt(PDF) 2 Page - Vishay Siliconix |
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SI4620DY-T1-E3 Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 13 page www.vishay.com 2 Document Number: 73862 S09-1341-Rev. D, 13-Jul-09 Vishay Siliconix Si4620DY Notes: a. Surface Mounted on FR4 board. b. t ≤ 10 s. c. Maximum under Steady State conditions for MOSFETS is 110 °C/W. d. Maximum under Steady State conditions for Schottky is 115 °C/W. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient (MOSFET)a, c RthJA 53 62.5 °C/W Maximum Junction-to-Foot (Drain) (MOSFET) RthJF 30 40 Maximum Junction-to-Ambient (Schottky) RthJA 55 65 Maximum Junction-to-Foot (Drain) (Schottky) RthJF 32 42 SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 32.5 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 5.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.2 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≤ 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 6 A 0.028 0.035 Ω VGS = 4.5 V, ID = 4.9 A 0.041 0.052 Forward Transconductancea gfs VDS = 15 V, ID = 6 A 12 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 520 1040 pF Output Capacitance Coss 115 230 Reverse Transfer Capacitance Crss 55 110 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 6 A 8.6 13 nC VDS = 15 V, VGS = 4.5 V, ID = 6 A 4.2 6.5 Gate-Source Charge Qgs 1.8 Gate-Drain Charge Qgd 1.5 Gate Resistance Rg f = 1 MHz 2.8 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 3.1 Ω ID ≅ 4.8 A, VGEN = 4.5 V, Rg = 6 Ω 16 30 ns Rise Time tr 36 54 Turn-Off Delay Time td(off) 21 40 Fall Time tf 17 40 |
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