SI4620DY-T1-GE3 datasheet(6/13 Pages) VISHAY

Teilenummer	SI4620DY-T1-GE3

Bauteilbeschribung	N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Hersteller	VISHAY [Vishay Siliconix]

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Document Number: 73862

S09-1341-Rev. D, 13-Jul-09

Vishay Siliconix

Si4620DY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

2

4

6

8

10

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power Derating

0

1

2

3

4

25

50

75

100

125

150

TC - Case Temperature (°C)

Ähnliche Beschreibung - SI4620DY-T1-GE3

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SI4620DY-T1-GE3 Datenblatt(PDF) 6 Page - Vishay Siliconix

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