SI4630DY-T1-GE3 datasheet(3/10 Pages) VISHAY

Teilenummer	SI4630DY-T1-GE3

Bauteilbeschribung	N-Channel 25-V (D-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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3 / 10 page

Document Number: 73685

S09-0138-Rev. C, 02-Feb-09

www.vishay.com

3

Vishay Siliconix

Si4630DY

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

10

20

30

40

50

60

70

0.0

0.5

1.0

1.5

2.0

2.5

VGS = 10 thru 3 V

VDS - Drain-to-Source Voltage (V)

0

102030405060

VGS = 10 V

ID - Drain Current (A)

VGS = 4.5 V

0.0022

0.0018

0.0026

0.0030

0.0034

0

2

4

6

8

10

0

224466

88

110

ID = 20 A

Qg - Total Gate Charge (nC)

VDS = 10 V

VGS = 20 V

VDS = 15 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.0

0.6

1.2

1.8

2.4

3.0

25 °C

TC = 125 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

0

1700

3400

5100

6800

8500

0

5

10

15

20

25

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS = 4.5 V

TJ - Junction Temperature (°C)

VGS = 10 V

ID = 20 A

Ähnliche Beschreibung - SI4630DY-T1-GE3

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Ähnliche Teilenummer - SI4630DY-T1-GE3

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