Datenblatt-Suchmaschine für elektronische Bauteile |
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SI4654DY Datenblatt(PDF) 4 Page - Vishay Siliconix |
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SI4654DY Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number: 69813 S09-0138-Rev. C, 02-Feb-09 Vishay Siliconix Si4654DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD -Source-to-Drain Voltage (V) 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) ID =5mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.004 0.008 0.012 0.016 0.020 0 246 8 10 VGS - Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C ID =15A 0 34 68 102 136 170 0 1 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 0.01 100 1 100 0.01 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1ms 10 ms 100 ms DC 0.1 1 10 10 TA = 25 °C Single Pulse 1s 10 s Limited byRDS(on)* |
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