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SI4812BDY Datenblatt(PDF) 4 Page - Vishay Siliconix |
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SI4812BDY Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 73038 S-83039-Rev. D, 29-Dec-08 Vishay Siliconix Si4812BDY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Reverse Current (Schottky) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 50 1 0.1 10 125 150 0.00001 1 10 TJ - Junction Temperature (°C) 0 255075 100 10 V 0.001 0.01 0.1 20 V 30 V 0.0001 On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (MOSFET) VGS - Gate-to-Source Voltage (V) 0.00 0.01 0.02 0.03 0.04 0.05 0 2468 10 ID = 9.5 A 0 10 20 30 40 50 Time (s) 600 100 10 1 0.1 0.01 Safe Operating Area, Junction-to-Case 100 1 0.1 1 10 100 0.01 10 1 ms 0.1 Limited by RDS(on)* TC = 25 °C Single Pulse 10 ms 100 ms DC 10 s 1 s VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which RDS(on) is specified |
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