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SI4914BDY-T1-GE3 Datenblatt(PDF) 11 Page - Vishay Siliconix

Teilenummer SI4914BDY-T1-GE3
Bauteilbeschribung  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4914BDY-T1-GE3 Datenblatt(HTML) 11 Page - Vishay Siliconix

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Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
www.vishay.com
11
Vishay Siliconix
Si4914BDY
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69654.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3
10-2
1
10
1000
10-1
10-4
100
0.2
0.1
0.05
0.02
Square WavePulse Duration (s)
1
0.1
0.01
Single Pulse
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA =115 °C/W
3. TJM - TA =PDMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3
10-2
0
1
1
10-1
10-4
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
1
0.1
0.01
0.05
0.02
Single Pulse


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