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SI4914BDY-T1-GE3 Datenblatt(PDF) 11 Page - Vishay Siliconix |
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SI4914BDY-T1-GE3 Datenblatt(HTML) 11 Page - Vishay Siliconix |
11 / 15 page Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 www.vishay.com 11 Vishay Siliconix Si4914BDY CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69654. Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 1000 10-1 10-4 100 0.2 0.1 0.05 0.02 Square WavePulse Duration (s) 1 0.1 0.01 Single Pulse t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA =115 °C/W 3. TJM - TA =PDMZthJA(t) t1 t2 4. Surface Mounted Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 0 1 1 10-1 10-4 0.2 0.1 Duty Cycle = 0.5 Square WavePulse Duration (s) 1 0.1 0.01 0.05 0.02 Single Pulse |
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