Datenblatt-Suchmaschine für elektronische Bauteile |
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SI5458DU Datenblatt(PDF) 3 Page - Vishay Siliconix |
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SI5458DU Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 65019 S09-1392-Rev. A, 20-Jul-09 www.vishay.com 3 Vishay Siliconix Si5458DU New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 VGS =10 V thru 4 V VGS =3 V VDS - Drain-to-Source Voltage (V) 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 VGS = 4.5 V VGS =10 V ID - Drain Current (A) 0 2 4 6 8 10 0123 456 ID = 7.1 A VDS =24 V VDS =15 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 5 012 3 4 TC = 25 °C TC = 125 °C TC =- 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 100 200 300 400 0 5 10 15 20 25 30 Ciss Coss VDS - Drain-to-Source Voltage (V) 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 VGS =4.5 V;ID =6.3 A VGS =10 V;ID =7.1 A TJ -Junction Temperature (°C) |
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