SI5504BDC datasheet(2/12 Pages) VISHAY

Teilenummer	SI5504BDC

Bauteilbeschribung	N- and P-Channel 30 V (D-S) MOSFET

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Document Number: 74483

S10-0547-Rev. B, 08-Mar-10

Vishay Siliconix

Si5504BDC

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

N-Ch

30

V

VGS = 0 V, ID = - 250 µA

P-Ch

- 30

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

N-Ch

27

mV/°C

ID = - 250 µA

P-Ch

- 30

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

ID = 250 µA

N-Ch

- 5

ID = - 250 µA

P-Ch

3.5

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

1.5

3

V

VDS = VGS, ID = - 250 µA

P-Ch

- 1.5

- 3

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

N-Ch

100

nA

P-Ch

- 100

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

N-Ch

1

µA

VDS = - 30 V, VGS = 0 V

P-Ch

- 1

VDS = 30 V, VGS = 0 V, TJ = 85 °C

N-Ch

5

VDS = - 30 V, VGS = 0 V, TJ = 85 °C

P-Ch

- 5

On-State Drain Currentb

ID(on)

VDS ≥ 5 V, VGS = 10 V

N-Ch

10

A

VDS ≤ - 5 V, VGS = - 10 V

P-Ch

- 10

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V, ID = 3.1 A

N-Ch

0.053

0.065

Ω

VGS = - 10 V, ID = - 2.1 A

P-Ch

0.112

0.140

VGS = 4.5 V, ID = 1 A

N-Ch

0.081

0.100

VGS = - 4.5 V, ID = - 0.43 A

P-Ch

0.188

0.235

Forward Transconductanceb

gfs

VDS = 15 V, ID = 3.1 A

N-Ch

5

S

VDS = - 15 V, ID = - 2.1 A

P-Ch

3.5

Dynamica

Input Capacitance

Ciss

N-Channel

VDS = 15 V, VGS = 0 V, f = 1 MHz

P-Channel

VDS = - 15 V, VGS = 0 V, f = 1 MHz

N-Ch

220

pF

P-Ch

170

Output Capacitance

Coss

N-Ch

50

P-Ch

50

Reverse Transfer Capacitance

Crss

N-Ch

25

P-Ch

31

Total Gate Charge

Qg

VDS = 15 V, VGS = 10 V, ID = 3.6 A

N-Ch

4.5

7

nC

VDS = - 15 V, VGS = - 10 V, ID = - 2.5 A

P-Ch

4.5

7

N-Channel

VDS = 15 V, VGS = 4.5 V, ID = 3.6 A

P-Channel

VDS = - 15 V, VGS = - 4.5 V, ID = - 2.5 A

N-Ch

2

3

P-Ch

2.2

3.5

Gate-Source Charge

Qgs

N-Ch

0.7

P-Ch

0.7

Gate-Drain Charge

Qgd

N-Ch

0.7

P-Ch

1

Gate Resistance

Rg

f = 1 MHz

N-Ch

3

Ω

P-Ch

13

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