SI5944DU-T1-GE3 datasheet(4/10 Pages) VISHAY

Teilenummer	SI5944DU-T1-GE3

Bauteilbeschribung	Dual N-Channel 40-V (D-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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Document Number: 73683

S-81449-Rev. B, 23-Jun-08

Vishay Siliconix

Si5944DU

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.01

10

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

1

1.0

1.2

0

0.2

0.4

0.6

0.8

1.8

2.0

2.2

2.4

2.6

2.8

3.0

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.05

0.10

0.15

0.20

0.25

0.30

1357

9

ID = 3.3 A

VGS - Gate-to-Source Voltage (V)

TA = 25 °C

TA = 125 °C

0

5

10

15

20

25

30

35

40

45

Time (s)

0

1

0.1

0.01

0.001

10

100

Safe Operating Area

100

1

0.1

1

10

100

0.001

10

TA = 25 °C

Single Pulse

0.1

Limited by RDS(on)*

VDS - Drain-to-Source Voltage (V)

* VGS

minimum VGS at which R DS(on) is specified

0.01

10 ms

100 ms

DC

1 s

10 s

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