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SI6423DQ Datenblatt(PDF) 2 Page - Vishay Siliconix |
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SI6423DQ Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model Si6423DQ SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 µA 0.73 V On-State Drain Current a ID(on) VDS = −5 V, VGS = −4.5 V 468 A VGS = −4.5 V, ID = −9.5 A 0.0069 0.0068 VGS = −2.5 V, ID = −8.5 A 0.0085 0.0085 Drain-Source On-State Resistance a rDS(on) VGS = −1.8 V, ID = −7.5 A 0.011 0.0112 Ω Forward Transconductance a gfs VDS = −15 V, ID = −9.5 A 30 45 S Diode Forward Voltage a VSD IS = −1.3 A, VGS = 0 V −0.80 −0.58 V Dynamic b Total Gate Charge Qg 59 74 Gate-Source Charge Qgs 9 9 Gate-Drain Charge Qgd VDS = −6 V, VGS = −5 V, ID = −9.5 A 19 19 nC Turn-On Delay Time td(on) 53 50 Rise Time tr 58 75 Turn-Off Delay Time td(off) 270 270 Fall Time tf VDD = −6 V, RL = 6 Ω ID ≅ −1 A, VGEN = −10 V, RG = 6 Ω 102 200 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 72327 S-52526 Rev. B, 12-Dec-05 |
Ähnliche Teilenummer - SI6423DQ_05 |
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Ähnliche Beschreibung - SI6423DQ_05 |
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