SI6562CDQ datasheet(9/17 Pages) VISHAY

Teilenummer	SI6562CDQ

Bauteilbeschribung	N- and P-Channel 20-V (D-S) MOSFETs

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Hersteller	VISHAY [Vishay Siliconix]

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9 / 17 page

Document Number: 68954

S-82575-Rev. A, 27-Oct-08

www.vishay.com

9

Vishay Siliconix

Si6562CDQ

New Product

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

10

1

100

TJ = 25 °C

TJ = 150 °C

VSD -Source-to-Drain Voltage (V)

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source

Single Pulse Power

0.00

0.02

0.04

0.06

0.08

0.10

0

1

234

5

TJ = 25 °C

TJ = 125 °C

ID =5.1 A

VGS - Gate-to-Source Voltage (V)

0

4

8

12

16

20

Time (s)

10

1000

0.1

0.01

0.001

100

1

Safe Operating Area, Junction-to-Ambient

100

1

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

1s,10s

* Limited byRDS(on)

BVDSS Limited

1ms

100 µs

10 ms

DC

100 ms

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Ähnliche Beschreibung - SI6562CDQ

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
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