SI6928DQ-T1-GE3 datasheet(3/10 Pages) VISHAY

Teilenummer	SI6928DQ-T1-GE3

Bauteilbeschribung	Dual N-Channel 30-V (D-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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3 / 10 page

Document Number: 70663

S-81056-Rev. D, 12-May-08

www.vishay.com

3

Vishay Siliconix

Si6928DQ

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

4

8

12

16

20

02468

10

VDS - Drain-to-Source Voltage (V)

VGS = 10 thru 5 V

4 V

3 V

0

0.01

0.02

0.03

0.04

0.05

0.06

0

4

8

12

16

20

I

D -

Drain Current (A)

V

GS

= 4.5 V

V

GS

= 10 V

0

2

4

6

8

10

0

4

8

12

16

20

Qg - Total Gate Charge (nC)

VDS = 15 V

ID = 4.0 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

4

8

12

16

20

012345

VGS - Gate-to-Source Voltage (V)

TC = 125 °C

- 55 °C

25 °C

0

300

600

900

1200

1500

0

6

12

18

24

30

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

V

GS = 10 V

I

D = 4.0 A

T

J

- Junction Temperature (°C)

Ähnliche Beschreibung - SI6928DQ-T1-GE3

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SI6928DQ-T1-GE3 Datenblatt(PDF) 3 Page - Vishay Siliconix

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