SI7145DP-T1-GE3 datasheet(9/13 Pages) VISHAY

Teilenummer	SI7145DP-T1-GE3

Bauteilbeschribung	P-Channel 30-V (D-S) MOSFET

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Document Number 71622

28-Feb-06

Vishay Siliconix

AN821

PowerPAK SO-8 DUAL

The pin arrangement (drain, source, gate pins) and the

pin dimensions of the PowerPAK SO-8 dual are the

same as standard SO-8 dual devices. Therefore, the

PowerPAK device connection pads match directly to

those of the SO-8. As in the single-channel package,

the only exception is the extended drain connection

area. Manufacturers can likewise take immediate

advantage of the PowerPAK SO-8 dual devices by

mounting them to existing SO-8 dual land patterns.

To take the advantage of the dual PowerPAK SO-8’s

thermal performance, the minimum recommended

land pattern can be found in Application Note 826,

Recommended Minimum Pad Patterns With Outline

Drawing Access for Vishay Siliconix MOSFETs. Click

on the PowerPAK 1212-8 dual in the index of this doc-

ument.

The gap between the two drain pads is 24 mils. This

matches the spacing of the two drain pads on the Pow-

erPAK SO-8 dual package.

REFLOW SOLDERING

Vishay Siliconix surface-mount packages meet solder

reflow reliability requirements. Devices are subjected

to solder reflow as a test preconditioning and are then

reliability-tested using temperature cycle, bias humid-

ity, HAST, or pressure pot. The solder reflow tempera-

ture profile used, and the temperatures and time

duration, are shown in Figures 3 and 4.

For the lead (Pb)-free solder profile, see http://

www.vishay.com/doc?73257.

Ramp-Up Rate

+ 6

°C /Second Maximum

Temperature at 155 ± 15

°C

120 Seconds Maximum

Temperature Above 180

°C

70 - 180 Seconds

Maximum Temperature

240 + 5/- 0

°C

Time at Maximum Temperature

20 - 40 Seconds

Ramp-Down Rate

+ 6

°C/Second Maximum

Figure 3. Solder Reflow Temperature Profile

Figure 3. Solder Reflow Temperatures and Time Durations

210 - 220 °C

3 °C(max)

4 °C/s (max)

10 s (max)

183 °C

50 s (max)

Reflow Zone

60 s (min)

Pre-Heating Zone

3 °C(max)

140 - 170 °C

Maximum peak temperature at 240 °C is allowed.

Ähnliche Beschreibung - SI7145DP-T1-GE3

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Vishay Siliconix	SI2341DS	43Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 11-Aug-03
Vishay Siliconix	SI4835BDY	90Kb / 6P	P-Channel 30-V (D-S) MOSFET Rev. D, 25-Oct-0
Anachip Corp	AF4407	263Kb / 5P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI7423DN	173Kb / 3P	P-Channel 30-V (D-S) MOSFET 24-May-04
	SI2303ADS	39Kb / 4P	P-Channel, 30-V (D-S) MOSFET Rev. B, 29-Apr-02
	SI3481DV	67Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 16-Feb-04
DinTek Semiconductor Co...	DTM4415	286Kb / 9P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4435DDY-T1-GE3	279Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. C, 18-May-09
	SI7121DN	552Kb / 13P	P-Channel 30-V (D-S) MOSFET Rev. C, 23-Jun-08
	SI4825DDY-T1	242Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. A, 13-Oct-08
	SI7129DN	566Kb / 13P	P-Channel 30 V (D-S) MOSFET Rev. B, 06-Sep-10

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