Datenblatt-Suchmaschine für elektronische Bauteile |
|
SI7164DP-T1-GE3 Datenblatt(PDF) 3 Page - Vishay Siliconix |
|
SI7164DP-T1-GE3 Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 13 page Document Number: 68738 S-81581-Rev. A, 07-Jul-08 www.vishay.com 3 Vishay Siliconix Si7164DP New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 16 32 48 64 80 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS =10thru 6 V VGS =5 V 0.0045 0.0049 0.0053 0.0057 0.0061 0.0065 014 28 42 56 70 ID - Drain Current (A) VGS =10 V VGS = 8V 0 2 4 6 8 10 0.0 10.4 20.8 31.2 41.6 52.0 Qg - Total Gate Charge (nC) VDS =30 V ID =10A VDS =40 V VDS =20 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 02 4 6 8 10 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC =- 55 °C Crss 0 730 1460 2190 2920 3650 0 5 10 15 20 25 30 Ciss VDS - Drain-to-Source Voltage (V) Coss 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) VGS = 8V VGS =10 V ID =10A |
Ähnliche Teilenummer - SI7164DP-T1-GE3 |
|
Ähnliche Beschreibung - SI7164DP-T1-GE3 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |