SI7186DP-T1-GE3 datasheet(3/13 Pages) VISHAY

Teilenummer	SI7186DP-T1-GE3

Bauteilbeschribung	N-Channel 80-V (D-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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Document Number: 69257

S09-0271-Rev. B, 16-Feb-09

www.vishay.com

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Vishay Siliconix

Si7186DP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

10

20

30

40

50

60

012345

VGS = 10 V thru 7 V

6 V

VDS - Drain-to-Source Voltage (V)

0.0095

0.0100

0.0105

0.0110

0.0115

0.0120

0

102030405060

VGS = 10 V

ID - Drain Current (A)

0

2

4

6

8

10

0

1020304050

ID

Qg - Total Gate Charge (nC)

VDS = 60 V

= 10 A

VDS = 20 V

VDS = 40 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.6

1.2

1.8

2.4

3.0

02468

10

TC = 125 °C

25 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

0

720

1440

2160

2880

3600

0

6

12

18

24

30

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

Crss

0.6

0.9

1.2

1.5

1.8

2.1

- 50

- 25

0

25

50

75

100

125

150

VGS = 10 V

TJ - Junction Temperature (°C)

ID = 10 A

Ähnliche Beschreibung - SI7186DP-T1-GE3

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VBsemi Electronics Co.,...	AOB470L	1Mb / 9P	N-Channel 80 V (D-S) MOSFET
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