Datenblatt-Suchmaschine für elektronische Bauteile |
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SI7224DN-T1-GE3 Datenblatt(PDF) 4 Page - Vishay Siliconix |
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SI7224DN-T1-GE3 Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 18 page www.vishay.com 4 Document Number: 69500 S-81549-Rev. B, 07-Jul-08 Vishay Siliconix Si7224DN New Product CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge VDS - Drain-to-Source Voltage (V) 0 5 10 15 20 25 0.0 0.4 0.8 1.2 1.6 2.0 VGS = 10 thru 4 V VGS = 3 V 0.020 0.024 0.028 0.032 0.036 0.040 0 5 10 15 20 25 ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 2 4 6 8 10 0 2468 10 Qg - Total Gate Charge (nC) VDS = 24 V VDS = 15 V ID = 6.5 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature VGS - Gate-to-Source Voltage (V) 0 1 2 3 4 5 6 7 8 9 10 0 0.5 1.0 1.5 2.0 2.5 3.0 TC = 25 °C TC = 125 °C TC = - 55 °C Crss VDS - Drain-to-Source Voltage (V) 0 200 400 600 800 0 5 10 15 20 25 30 Coss Ciss TJ - Junction Temperature (°C) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 ID = 6.5 A VGS = 10 V, 4.5 V |
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