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SI7236DP Datenblatt(PDF) 1 Page - Vishay Siliconix

Teilenummer SI7236DP
Bauteilbeschribung  Dual N-Channel 20-V (D-S) MOSFET
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Vishay Siliconix
Si7236DP
Document Number: 70359
S09-0222-Rev. B, 09-Feb-09
www.vishay.com
1
Dual N-Channel 20-V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Available
TrenchFET® Power MOSFET
APPLICATIONS
Synchronous Rectification
DC-DC Point-of-Load
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
a
Qg (Typ.)
20
0.0052 at VGS = 4.5 V
60
31 nC
0.007 at VGS = 2.5 V
60
Ordering Information: Si7236DP-T1-E3 (Lead (Pb)-free)
Si7236DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
6.15 mm
5.15 mm
Bottom View
PowerPAK SO-8
N-Channel MOSFET
G1
D1
S1
N-Channel MOSFET
G2
D2
S2
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 85 °C/W.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
60a
A
TC = 85 °C
60a
TA = 25 °C
20.7b, c
TA = 85 °C
16.6b, c
Pulsed Drain Current
IDM
80
Continuous Source-Drain Diode Current
TC = 25 °C
IS
38
TA = 25 °C
2.9b, c
Maximum Power Dissipation
TC = 25 °C
PD
46
W
TC = 85 °C
29
TA = 25 °C
3.5b, c
TA = 85 °C
2.2b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
t
≤ 10 s
RthJA
26
35
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
2.2
2.7


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