Datenblatt-Suchmaschine für elektronische Bauteile |
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SI7308DN-T1-E3 Datenblatt(PDF) 3 Page - Vishay Siliconix |
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SI7308DN-T1-E3 Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 13 page Document Number: 73419 S-83051-Rev. B, 29-Dec-08 www.vishay.com 3 Vishay Siliconix Si7308DN TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 2 4 6 8 10 12 14 16 18 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VGS = 10 thru 4 V 3 V VDS - Drain-to-Source Voltage (V) 0.040 0.045 0.050 0.055 0.060 0.065 0.070 0.075 0.080 0 2 4 6 8 101214 1618 20 VGS = 10 V ID - Drain Current (A) VGS = 4.5 V 0 2 4 6 8 10 0369 12 15 VDS = 30 V ID = 5.4 A Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 °C TC = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) 0 200 400 600 800 1000 0 102030405060 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V, 4.5 V ID = 5.4 A TJ - Junction Temperature (°C) |
Ähnliche Teilenummer - SI7308DN-T1-E3 |
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Ähnliche Beschreibung - SI7308DN-T1-E3 |
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