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SI7540DP Datenblatt(PDF) 1 Page - Vishay Siliconix |
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SI7540DP Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 15 page Vishay Siliconix Si7540DP Document Number: 71911 S09-0227-Rev. F, 09-Feb-09 www.vishay.com 1 N- and P-Channel 12-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • PWM Optimized for High Efficiency • 100 % Rg Tested APPLICATIONS • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down - Qg Optimized for 500 kHz Operation • Synchronous Buck, Shoot-Thru Resistant PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) N-Channel 12 0.017 at VGS = 4.5 V 11.8 0.025 at VGS = 2.5 V 9.8 P-Channel - 12 0.032 at VGS = - 4.5 V - 8.9 0.053 at VGS = - 2.5 V - 6.9 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D1 D1 D2 D2 6.15 mm 5.15 mm Bottom View PowerPAK SO-8 Ordering Information: Si7540DP-T1-E3 (Lead (Pb)-free) Si7540DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET D1 G1 S1 S2 G2 D2 P-Channel MOSFET Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile ( www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit 10 s Steady 10 s Steady Drain-Source Voltage VDS 12 - 12 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 11.8 7.6 - 8.9 - 5.7 A TA = 70 °C 9.5 6.1 - 7.1 - 4.6 Pulsed Drain Current IDM 20 Continuous Source Current (Diode Conduction)a IS 2.9 1.1 - 2.9 - 1.1 Maximum Power Dissipationa TA = 25 °C PD 3.5 1.4 3.5 1.4 W TA = 70 °C 2.2 0.9 2.2 0.9 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)b,c 260 THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel P-Channel Unit Typical Maximum Typical Maximum Maximum Junction-to-Ambienta t ≤ 10 s RthJA 26 35 26 35 °C/W Steady State 60 85 60 85 Maximum Junction-to-Case (Drain) Steady State RthJC 3.9 5.5 3.9 5.5 |
Ähnliche Teilenummer - SI7540DP_09 |
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Ähnliche Beschreibung - SI7540DP_09 |
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