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SI7540DP Datenblatt(PDF) 1 Page - Vishay Siliconix

Teilenummer SI7540DP
Bauteilbeschribung  N- and P-Channel 12-V (D-S) MOSFET
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7540DP Datenblatt(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si7540DP
Document Number: 71911
S09-0227-Rev. F, 09-Feb-09
www.vishay.com
1
N- and P-Channel 12-V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Available
TrenchFET® Power MOSFETs
New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
PWM Optimized for High Efficiency
100 % Rg Tested
APPLICATIONS
Point-of-Load Synchronous Rectifier
- 5 V or 3.3 V BUS Step Down
- Qg Optimized for 500 kHz Operation
Synchronous Buck, Shoot-Thru Resistant
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (A)
N-Channel
12
0.017 at VGS = 4.5 V
11.8
0.025 at VGS = 2.5 V
9.8
P-Channel
- 12
0.032 at VGS = - 4.5 V
- 8.9
0.053 at VGS = - 2.5 V
- 6.9
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
6.15 mm
5.15 mm
Bottom View
PowerPAK SO-8
Ordering Information: Si7540DP-T1-E3 (Lead (Pb)-free)
Si7540DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
D1
G1
S1
S2
G2
D2
P-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (
www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
10 s
Steady
10 s
Steady
Drain-Source Voltage
VDS
12
- 12
V
Gate-Source Voltage
VGS
± 8
Continuous Drain Current (TJ = 150 °C)
a
TA = 25 °C
ID
11.8
7.6
- 8.9
- 5.7
A
TA = 70 °C
9.5
6.1
- 7.1
- 4.6
Pulsed Drain Current
IDM
20
Continuous Source Current (Diode Conduction)a
IS
2.9
1.1
- 2.9
- 1.1
Maximum Power Dissipationa
TA = 25 °C
PD
3.5
1.4
3.5
1.4
W
TA = 70 °C
2.2
0.9
2.2
0.9
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)b,c
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N-Channel
P-Channel
Unit
Typical
Maximum
Typical
Maximum
Maximum Junction-to-Ambienta
t
≤ 10 s
RthJA
26
35
26
35
°C/W
Steady State
60
85
60
85
Maximum Junction-to-Case (Drain)
Steady State
RthJC
3.9
5.5
3.9
5.5


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