Datenblatt-Suchmaschine für elektronische Bauteile |
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SI7478DP-T1-GE3 Datenblatt(PDF) 3 Page - Vishay Siliconix |
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SI7478DP-T1-GE3 Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 12 page Document Number: 72913 S09-0271-Rev. D, 16-Feb-09 www.vishay.com 3 Vishay Siliconix Si7478DP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0 102030405060 VGS = 10 V ID - Drain Current (A) VGS = 4.5 V 0 2 4 6 8 10 0 20406080 100 120 VDS = 30 V ID = 20 A Qg - Total Gate Charge (nC) VSD - Source-to-Drain Voltage (V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C TJ = 25 °C 60 10 1 Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 2000 4000 6000 8000 10000 0 102030405060 Coss Ciss VDS - Drain-to-Source Voltage (V) Crss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 20 A TJ - Junction Temperature (°C) 0.000 0.004 0.008 0.012 0.016 0.020 02468 10 VGS - Gate-to-Source Voltage (V) ID = 20 A |
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