SI7540DP-T1-GE3 datasheet(7/15 Pages) VISHAY

Teilenummer	SI7540DP-T1-GE3

Bauteilbeschribung	N- and P-Channel 12-V (D-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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Document Number: 71911

S09-0227-Rev. F, 09-Feb-09

www.vishay.com

7

Vishay Siliconix

Si7540DP

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 150 °C

TJ = 25 °C

20

10

1

VSD - Source-to-Drain Voltage (V)

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

ID = 250 μA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.00

0.03

0.06

0.09

0.12

0.15

0

1234

5

ID = 8.9 A

VGS - Gate-to-Source Voltage (V)

ID = 3 A

0

24

40

8

16

Time (s)

32

100

600

0.1

0.01

1

10

Safe Operating Area, Junction-to-Ambient

VDS - Drain-to-Source Voltage (V)

100

1

0.1

1

10

100

0.01

10

TA = 25 °C

Single Pulse

10 s

DC

0.1

IDM Limited

ID(on)

Limited

BVDSS Limited

1 s

100 ms

10 ms

1 ms

Limited by RDS(on)

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