Datenblatt-Suchmaschine für elektronische Bauteile |
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SI7634BDP-T1-E3 Datenblatt(PDF) 3 Page - Vishay Siliconix |
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SI7634BDP-T1-E3 Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 13 page Document Number: 74031 S-80439-Rev. C, 03-Mar-08 www.vishay.com 3 Vishay Siliconix Si7634BDP New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 14 28 42 56 70 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS = 10 thru 4 V 3 V ID - Drain Current (A) 0.0035 0.0043 0.0051 0.0059 0.0067 0.0075 014 28 42 56 70 VGS = 4.5 V VGS = 10 V 0 2 4 6 8 10 0.0 9.6 19.2 28.8 38.4 48.0 ID = 10 A Qg - Total Gate Charge (nC) VDS = 10 V VDS = 15 V VDS = 20 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.3 0.6 0.9 1.2 1.5 012345 TC = 125 °C VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = - 55 °C Crss 0 760 1520 2280 3040 3800 0 6 12 18 24 30 Coss Ciss VDS - Drain-to-Source Voltage (V) 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) ID = 15 A VGS = 4.5 V VGS = 10 V |
Ähnliche Teilenummer - SI7634BDP-T1-E3 |
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Ähnliche Beschreibung - SI7634BDP-T1-E3 |
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