SI7720DN-T1-GE3 datasheet(5/14 Pages) VISHAY

Teilenummer	SI7720DN-T1-GE3

Bauteilbeschribung	N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Hersteller	VISHAY [Vishay Siliconix]

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5 / 14 page

Document Number: 68787

S-81716-Rev. A, 04-Aug-08

www.vishay.com

5

Vishay Siliconix

Si7720DN

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Reverse Current (Schottky)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD -Source-to-Drain Voltage (V)

1

0.01

0.001

0.1

10

100

TJ = 150 °C

TJ = 25 °C

0

25

50

75

100

125

150

TJ -Junction Temperature (°C)

30 V

10 V

20 V

10-6

10-3

10-1

10-5

10-4

10-2

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.01

0.02

0.03

0.04

0.05

02

4

6

8

10

VGS - Gate-to-Source Voltage (V)

TJ =25 °C

TJ = 125 °C

ID =10A

0

30

60

90

120

150

0

1

0

.

00.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

0.01

100

1

100

0.01

0.1

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

1ms

10 ms

100 ms

0.1

1

10

TA = 25 °C

Single Pulse

Limited byRDS(on)*

1s

DC

10 s

BVDSS Limited

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SI7720DN-T1-GE3 Datenblatt(PDF) 5 Page - Vishay Siliconix

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