SI7772DP-T1-GE3 datasheet(5/13 Pages) VISHAY

Teilenummer	SI7772DP-T1-GE3

Bauteilbeschribung	N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Hersteller	VISHAY [Vishay Siliconix]

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5 / 13 page

Document Number: 65169

S09-1822-Rev. A, 14-Sep-09

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Vishay Siliconix

Si7772DP

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0.0

9.2

18.4

27.6

36.8

46.0

0

255075

100

125

150

TC - Case Temperature (°C)

Power, Junction-to-Case

0.0

7.2

14.4

21.6

28.8

36.0

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power, Junction-to-Ambient

0.00

0.44

0.88

1.32

1.76

2.20

0

25

50

75

100

125

150

TA -Ambient Temperature (°C)

Ähnliche Beschreibung - SI7772DP-T1-GE3

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