Datenblatt-Suchmaschine für elektronische Bauteile |
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SI7852ADP-T1-GE3 Datenblatt(PDF) 3 Page - Vishay Siliconix |
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SI7852ADP-T1-GE3 Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 13 page Document Number: 73988 S09-0223-Rev. C, 09-Feb-09 www.vishay.com 3 Vishay Siliconix Si7852ADP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 12 24 36 48 60 0 1 234 5 VDS - Drain-to-Source Voltage (V) VGS =10 V thru 7 V 6 V 5 V ID - Drain Current (A) 0.012 0.014 0.016 0.018 0.020 0.022 0 102030 405060 VGS = 8V VGS =10 V 0 2 4 6 8 10 0 7 14 21 28 35 ID =10A Qg - Total Gate Charge (nC) VDS =40 V VDS =60 V VDS =20 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0 246 8 10 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = - 55 °C TC = 125 °C Crss 0 500 1000 1500 2000 2500 0 12243648 60 Coss Ciss VDS - Drain-to-Source Voltage (V) 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 TJ - JunctionTemperature (°C) ID =10A VGS =10 V VGS = 8V |
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