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SI7904BDN-T1-GE3 Datenblatt(PDF) 6 Page - Vishay Siliconix |
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SI7904BDN-T1-GE3 Datenblatt(HTML) 6 Page - Vishay Siliconix |
6 / 13 page www.vishay.com 6 Document Number: 74409 S-83050-Rev. B, 29-Dec-08 Vishay Siliconix Si7904BDN TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74409. Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 600 10-1 10-4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1.Duty Cycle, D = 2. Per Unit Base = R thJA = 75 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM Normalized Thermal Transient Impedance, Junction-to-Case Single Pulse 0.01 0.1 1 Square Wave Pulse Duration (s) 10-2 10-1 10 1 10-3 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse |
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