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SI7956DP Datenblatt(PDF) 2 Page - Vishay Siliconix |
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SI7956DP Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model Si7956DP SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.3 V On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 53 A VGS = 10 V, ID = 4.1 A 0.088 0.088 Drain-Source On-State Resistance a rDS(on) VGS = 6 V, ID = 3.9 A 0.101 0.096 Ω Forward Transconductance a gfs VDS = 15 V, ID = 4.1 A 7 10 S Diode Forward Voltage a VSD IS = 2.9 A, VGS = 0 V 0.76 0.77 V Dynamic b Total Gate Charge Qg 16.4 17 Gate-Source Charge Qgs 3.9 3.9 Gate-Drain Charge Qgd VDS = 75 V, VGS = 10 V, ID = 4.1 A 5.5 5.5 nC Turn-On Delay Time td(on) 7 14 Rise Time tr 18 13 Turn-Off Delay Time td(off) 24 36 Fall Time tf VDD = 75 V, RL = 75 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω 16 18 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 72986 S-60261 Rev. B, 27-Feb-06 |
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