SI7956DP datasheet(2/4 Pages) VISHAY

Teilenummer	SI7956DP

Bauteilbeschribung	Dual N-Channel 150-V (D-S) MOSFET

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Vishay Siliconix

SPICE Device Model Si7956DP

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.3

V

On-State Drain Current

a

ID(on)

VDS ≥ 5 V, VGS = 10 V

53

A

VGS = 10 V, ID = 4.1 A

0.088

Drain-Source On-State Resistance

a

rDS(on)

VGS = 6 V, ID = 3.9 A

0.101

0.096

Ω

Forward Transconductance

a

gfs

VDS = 15 V, ID = 4.1 A

7

10

S

Diode Forward Voltage

a

VSD

IS = 2.9 A, VGS = 0 V

0.76

0.77

V

Dynamic

b

Total Gate Charge

Qg

16.4

17

Gate-Source Charge

Qgs

3.9

Gate-Drain Charge

Qgd

VDS = 75 V, VGS = 10 V, ID = 4.1 A

5.5

nC

Turn-On Delay Time

td(on)

7

14

Rise Time

tr

18

13

Turn-Off Delay Time

td(off)

24

36

Fall Time

tf

VDD = 75 V, RL = 75 Ω

ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω

16

18

ns

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

2

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Document Number: 72986

S-60261

Rev. B, 27-Feb-06

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