SI7980DP datasheet(5/18 Pages) VISHAY

Teilenummer	SI7980DP

Bauteilbeschribung	Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode

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5 / 18 page

Document Number: 68391

S-83039-Rev. C, 29-Dec-08

www.vishay.com

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Vishay Siliconix

Si7980DP

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-DrainVoltage(V)

1

0.01

0.001

0.1

10

100

TJ = 25 °C

TJ = 150 °C

- 0.8

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

I

D = 250 mA

T

J - Temperature (°C)

I

D =5mA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.000

0.012

0.024

0.036

0.048

0.060

0

246

8

10

VGS - Gate-to-Source Voltage (V)

T

J = 25 °C

T

J = 125 °C

I

D =5A

0

12

24

36

48

60

0

1

0

.

0

0.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

V

DS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

100

1

0.1

1

10

100

0.01

10

0.1

T

A = 25 °C

Single Pulse

10 ms

100 ms

1s

10 s

DC

Limited byR

DS(on)*

BVDSS

Limited

1ms

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