Datenblatt-Suchmaschine für elektronische Bauteile |
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SI7980DP-T1-GE3 Datenblatt(PDF) 9 Page - Vishay Siliconix |
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SI7980DP-T1-GE3 Datenblatt(HTML) 9 Page - Vishay Siliconix |
9 / 18 page Document Number: 68391 S-83039-Rev. C, 29-Dec-08 www.vishay.com 9 Vishay Siliconix Si7980DP CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Reverse Current (Schottky) 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 T J = 150 °C VSD -Source-to-Drain Voltage (V) T J = 25 °C 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) 10-3 10-5 10-6 10-4 10-2 10-1 VDS =15 V VDS =10 V VDS =20 V On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.02 0.04 0.06 0.08 0.10 0 246 8 10 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =5A 0 14 28 42 56 70 0 1 1 1 0 0 . 0 0.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 10 ms 100 ms 1s 10 s DC Limited byRDS(on)* BVDSS Limited 1ms |
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