Datenblatt-Suchmaschine für elektronische Bauteile |
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SI8402DB Datenblatt(PDF) 1 Page - Vishay Siliconix |
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SI8402DB Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si8402DB Document Number: 72657 S-82118-Rev. C, 08-Sep-08 www.vishay.com 1 20-V N-Channel 1.8-V (G-S) MOSFET FEATURES • TrenchFET® Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area APPLICATIONS • PA, Battery and Load Switch for Portable Devices PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) 20 0.037 at VGS = 4.5 V 7.3 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 MICRO FOOT 32 41 S DD G Bump Side View Backside View Device Marking: 8402 xxx = Date/Lot Traceability Code 8402 xxx Ordering Information: Si8402DB-T1-E1 (Lead (Pb)-free) N-Channel MOSFET G D S Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 7.3 5.3 A TA = 70 °C 5.9 4.3 Pulsed Drain Current IDM 30 Continuous Source Current (Diode Conduction)a IS 2.3 1.2 Maximum Power Dissipationa TA = 25 °C PD 2.77 1.47 W TA = 70 °C 1.77 0.94 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Package Reflow Conditionsb IR/Convection 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 5 s RthJA 35 45 °C/W Steady State 72 85 Maximum Junction-to-Foot (Drain) Steady State RthJF 16 20 RoHS COMPLIANT |
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